?2000 fairchild semiconductor international september 2000 FME6G20US60 rev. a igbt FME6G20US60 absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature symbol description FME6G20US60 units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c20 a i cm (1) pulsed collector current 40 a i f diode continuous forward current @ t c = 100 c20 a i fm diode maximum forward current 40 a t sc short circuit withstand time @ t c = 100 c10 us p d m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 c56 w t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +125 c v iso isolation voltage @ ac 1minute 2500 v mounting torque mounting screw : m5 2.0 n.m FME6G20US60 econo type module general description fairchild igbt power module provides low conduction and switching losses as well as short circuit ruggedness. it?s designed for the applications such as motor control, ups and general inverters where short-circuit ruggedness is required. features short circuit rated 10us @ t c = 100 c, v ge = 15v high speed switching low saturation voltage : v ce(sat) = 2.2 v @ i c = 20a high input impedance fast & soft anti-parallel fwd application ac & dc motor controls general purpose inverters robotics servo controls ups internal circuit diagram 1 2 3 u vw 4 5 6 7 8 9 10 11 12 package code : 17pm-ca
?2000 fairchild semiconductor international FME6G20US60 rev. a FME6G20US60 electrical characteristics of igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 5.0 6.0 8.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -- 2.2 2.8 v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1323 -- pf c oes output capacitance -- 254 -- pf c res reverse transfer capacitance -- 47 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 c -- 30 -- ns t r rise time -- 49 -- ns t d(off) turn-off delay time -- 48 70 ns t f fall time -- 152 200 ns e on turn-on switching loss -- 524 -- mj e off turn-off switching loss -- 473 -- mj e ts total switching loss -- 997 1400 mj t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 c -- 30 -- ns t r rise time -- 51 -- ns t d(off) turn-off delay time -- 52 75 ns t f fall time -- 311 400 ns e on turn-on switching loss -- 568 -- mj e off turn-off switching loss -- 1031 -- mj e ts total switching loss -- 1599 2240 mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c = 20a, v ge = 15v -- 55 80 nc q ge gate-emitter charge -- 10 15 nc q gc gate-collector charge -- 25 40 nc
?2000 fairchild semiconductor international FME6G20US60 rev. a FME6G20US60 electrical characteristics of diode t c = 25 c unless otherwise noted thermal characteristics symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 20a t c = 25 c -- 2.0 2.8 v t c = 100 c -- 2.3 -- t rr diode reverse recovery time i f = 20a di / dt = 40 a/us t c = 25 c -- 75 150 ns t c = 100 c -- 110 -- i rr diode peak reverse recovery current t c = 25 c -- 1.2 1.8 a t c = 100 c -- 1.8 -- q rr diode reverse recovery charge t c = 25 c -- 180 300 nc t c = 100 c -- 400 -- symbol parameter typ. max. units r jc junction-to-case (igbt part, per 1/6 module) -- 2.2 c / w r jc junction-to-case (diode part, per 1/6 module) -- 3.0 c / w weight weight of module -- 180 g
?2000 fairchild semiconductor international FME6G20US60 rev. a FME6G20US60 fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 10 20 30 40 50 60 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 110 0 10 20 30 40 50 60 common emitter v ge = 15v t c = 25 t c = 125 ------ collector current, i c [a] collector - emitter voltage, v ce [v] -50 0 50 100 150 0 1 2 3 4 5 20a 40a 30a i c = 10a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [ ] 0 4 8 12 16 20 24 28 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 32w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 048121620 0 4 8 12 16 20 common emitter t c = 25 40a 20a i c = 10a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 125 40a 20a i c = 10a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v]
?2000 fairchild semiconductor international FME6G20US60 rev. a FME6G20US60 fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 400 800 1200 1600 2000 2400 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v] 1 10 100 10 100 common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ ton tr switching time [ns] gate resistance, r g [ ? ] 110100 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ switching time [ns] gate resistance, r g [ ? ] 110100 100 1000 eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 20a t c = 25 t c = 125 ------ switching loss [uj] gate resistance, r g [ ? ] 10 15 20 25 30 35 40 10 100 ton tr common emitter v ge = 15v, r g = 10 ? t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a] 10 15 20 25 30 35 40 100 1000 tf toff toff tf common emitter v ge = 15v, r g = 10 ? t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a]
?2000 fairchild semiconductor international FME6G20US60 rev. a FME6G20US60 10 15 20 25 30 35 40 100 1000 eoff eon eoff common emitter v ge = 15v, r g = 10 ? t c = 25 t c = 125 ------ switching loss [uj] collector current, i c [a] 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 collector current, i c [a] collector-emitter voltage, v ce [v] 0.3 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v] 0 102030405060 0 3 6 9 12 15 300 v 200 v v cc = 100 v common emitter r l = 15 ? t c = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] fig 14. gate charge characteristics fig 13. switching loss vs. collector current fig 15. soa characteristics fig 16. turn-off soa characteristics fig 17. rbsoa characteristics fig 18. transient thermal impedence 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 igbt : diode : thermal response, zthjc [ /w] rectangular pulse duration [sec] 0 100 200 300 400 500 600 700 0.1 1 10 80 single nonrepetitive pulse t j 125 v ge = 15v r g = 10 ? collector current, i c [a] collector-emitter voltage, v ce [v]
?2000 fairchild semiconductor international FME6G20US60 rev. a FME6G20US60 36912151821 0.1 1 10 20 common cathode di/dt = 40a/us t c = 25 t c = 100 i rr t rr peak reverse recovery current, i rr [a] reverse recovery time, t rr [x10ns] forward current, i f [a] fig 20. reverse recovery characteristics fig 19. forward characteristics 01234 0 5 10 15 20 25 30 35 40 common cathode v ge = 0v t c = 25 t c = 125 forward current, i f [a] forward voltage, v f [v]
?2000 fairchild semiconductor international FME6G20US60 rev. a FME6G20US60 package dimension dimensions in millimeters 7.3 11.43 0.1 3.81 0.1 41.91 0.1 32.0 0.1 12 1 p+ w v u n- name plate 30.5 1 4*15.24=60.96 1.0 17.0 13.0 1.2 2- 5.5 4- 2.5 4- 6.0 max 45.0 93.0 0.2 15.24 max 107.0 5*11.43=57.15 0.1
?2000 fairchild semiconductor international trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt? dome? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pop? powertrench ? qfet? qs? qt optoelectronics? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. f1 vcx?
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